Field Emission with Ultra low Turn On Voltage from Metal Decorated Carbon Nanotubes

Sridhar, Srividya and Tiwary, Chandrasekhar and Vinod, Soumya and Taha-Tijerina, Jose Jaime and Sridhar, Srividvatha and Kalaga, Kaushik and Sirota, Benjamin and Hart, Amelia HC and Ozden, Sehmus and Sinha, Ravindra Kumar and Harsh, H and Vajtai, Robert and Choi, Wongbong and Kordas, Krisztian and Ajayan, Pulickel M (2014) Field Emission with Ultra low Turn On Voltage from Metal Decorated Carbon Nanotubes. In: ACS NANO, 8 (8). pp. 7763-7770.

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Abstract

A simple and scalable method of decorating 3D-carbon nanotube (CNT) forest with metal particles has been developed. The results observed in aluminum (AI) decorated CNTs and copper (Cu) decorated CNTs on silicon (Si) and Inconel are compared with undecorated samples. A significant improvement in the field emission characteristics of the cold cathode was observed with ultralow turn on voltage (E-to similar to 0.1 V/mu m) due to decoration of CNTs with metal nanoparticles. Contact resistance between the CNTs and the substrate has also been reduced to a large extent, allowing us to get stable emission for longer duration without any current degradation, thereby providing a possibility of their use in vacuum microelectronic devices.

Item Type:	Journal Article
Publication:	ACS NANO
Additional Information:	Copy right for this article belongs to the AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	10 Oct 2014 09:12
Last Modified:	10 Oct 2014 09:12
URI:	http://eprints.iisc.ac.in/id/eprint/49980

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