Effect of Process Deviations on Performance of Piezoresistive Pressure Sensors

Singh, Jaspreet and Rajanna, K and Reddy, Mallikarjuna A and Singh, Kamaljeet (2014) Effect of Process Deviations on Performance of Piezoresistive Pressure Sensors. In: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 27 (3). pp. 410-416.

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Abstract

Diaphragm thickness and the corresponding piezoresistor locations change due to over or under etching in bulk micromachined piezoresistive pressure sensor which intern influences the device performance. In the present work, variation of sensitivity and nonlinearity of a micro electro mechanical system low pressure sensor is investigated. The sensor is modeled using finite element method to analyze the variation of sensitivity and nonlinearity with diaphragm thickness. To verify the simulated results, the sensors with different diaphragm thicknesses are fabricated. The models are verified by comparing the calculated results with experimental data. This study is potentially useful for the researchers as most of the times the diaphragm is either over-etched or under-etched due to inherent variation in wafer thickness and involving manual operations.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords:	MEMS; pressure sensor; microfabrication; KOH etching
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	24 Sep 2014 05:51
Last Modified:	24 Sep 2014 05:51
URI:	http://eprints.iisc.ac.in/id/eprint/49939

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