Influence of seed layer orientation on the growth and physical properties of SnS nanostructures

Reddy, Koteeswara N and Devika, M and Gunasekhar, KR (2014) Influence of seed layer orientation on the growth and physical properties of SnS nanostructures. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 116 (3). pp. 1193-1197.

PDF app_phy A_mat_sci_pro_116-3_1193_2014.pdf - Published Version Restricted to Registered users only Download (733kB) | Request a copy

Abstract

Stoichiometric tin (II) sulfide (SnS) nano-structures were synthesized on SnS(010)/glass substrates using a simple and low-temperature chemical solution method, and their physical properties were investigated. The as-synthesized SnS nanostructures exhibited orthorhombic crystal structure and most of the nanocrystals are preferentially oriented along the <010> direction. These nanostructures showed p-type electrical conductivity and high electrical resistivity of 93 Omega cm. SnS nanostructures exhibited a direct optical band gap of 1.43 eV. While increasing the surrounding temperature from 20 to 150 degrees C, the electrical resistivity of the structures decreased and exhibited the activation energy of 0.28 eV.

Item Type:	Journal Article
Publication:	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Publisher:	SPRINGER
Additional Information:	Copy right for this article belongs to the SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Department/Centre:	Division of Mechanical Sciences > Aerospace Engineering(Formerly Aeronautical Engineering) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	24 Sep 2014 05:47
Last Modified:	24 Sep 2014 05:47
URI:	http://eprints.iisc.ac.in/id/eprint/49916

Actions (login required)

View Item