Rao, Duggi Sridhara V and Sankarasubramanian, Ramachandran and Muraleedharan, Kuttanellore and Mehrtens, Thorsten and Rosenauer, Andreas and Banerjee, Dipankar (2014) Quantitative Strain and Compositional Studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. In: MICROSCOPY AND MICROANALYSIS, 20 (4). pp. 1262-1270.
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In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the InxGa1 (-) As-x channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the InxGa1 (-) As-x layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the InxGa1 (-) As-x channel layer was pseudomorphically grown leading to tetragonal strain along the 001] growth direction and that the average indium content (x) in the epilayer is similar to 0.12. We found consistency in the results obtained using various methods of analysis.
| Item Type: | Journal Article |
|---|---|
| Publication: | MICROSCOPY AND MICROANALYSIS |
| Publisher: | CAMBRIDGE UNIV PRESS |
| Additional Information: | Copy right for this article belongs to the CAMBRIDGE UNIV PRESS, 32 AVENUE OF THE AMERICAS, NEW YORK, NY 10013-2473 USA |
| Keywords: | TEM; HEMT; InGaAs; quantum well; strain; composition |
| Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
| Date Deposited: | 04 Sep 2014 11:04 |
| Last Modified: | 04 Sep 2014 11:04 |
| URI: | http://eprints.iisc.ac.in/id/eprint/49765 |
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