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Room temperature electrical spin injection into GaAs by an oxide spin injector

Bhat, Shwetha G and Kumar, Anil PS (2014) Room temperature electrical spin injection into GaAs by an oxide spin injector. In: SCIENTIFIC REPORTS, 4 (5588).

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Official URL: http://dx.doi.org/10.1038/srep05588


Spin injection, manipulation and detection are the integral parts of spintronics devices and have attracted tremendous attention in the last decade. It is necessary to judiciously choose the right combination of materials to have compatibility with the existing semiconductor technology. Conventional metallic magnets were the first choice for injecting spins into semiconductors in the past. So far there is no success in using a magnetic oxide material for spin injection, which is very important for the development of oxide based spintronics devices. Here we demonstrate the electrical spin injection from an oxide magnetic material Fe3O4, into GaAs with the help of tunnel barrier MgO at room temperature using 3-terminal Hanle measurement technique. A spin relaxation time tau similar to 0.9 ns for n-GaAs at 300 K is observed along with expected temperature dependence of t. Spin injection using Fe3O4/MgO system is further established by injecting spins into p-GaAs and a tau of similar to 0.32 ns is obtained at 300 K. Enhancement of spin injection efficiency is seen with barrier thickness. In the field of spin injection and detection, our work using an oxide magnetic material establishes a good platform for the development of room temperature oxide based spintronics devices.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the NATURE PUBLISHING GROUP, ENGLAND.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Aug 2014 11:24
Last Modified: 19 Aug 2014 11:24
URI: http://eprints.iisc.ac.in/id/eprint/49625

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