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Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Sekhar, Chandra M and Reddy, Nanda Kumar N and Rao, Venkata B and Rao, Mohan G and Uthanna, S (2014) Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors. In: SURFACE AND INTERFACE ANALYSIS, 46 (7). pp. 465-471.

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Official URL: http://dx.doi.org/10.1002/sia.5538


Titanium dioxide (TiO2) thin films were deposited onto p-Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80-200W. The as-deposited TiO2 films were annealed at a temperature of 1023K. The post-annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO2/p-Si structure were determined from the capacitance-voltage and current-voltage characteristics. X-ray diffraction studies confirmed that the as-deposited films were amorphous in nature. After post-annealing at 1023K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers >160W showed the mixed anatase and rutile phases of TiO2. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air-annealed Al/TiO2/p-Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO2/p-Si (metal-insulator-semiconductor) was systematically investigated. Copyright (c) 2014 John Wiley & Sons, Ltd.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the WILEY-BLACKWELL, 111 RIVER ST, HOBOKEN 07030-5774, NJ USA
Keywords: sputtering; metal-insulator-semiconductor (MIS) structure; Schottky barrier height; ideality factor; series resistance
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 23 Jul 2014 10:32
Last Modified: 23 Jul 2014 10:32
URI: http://eprints.iisc.ac.in/id/eprint/49509

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