Prasanna, S and Shaik, H and Rao, Mohan G and Vandana, V and Singh, PK and Jayakumar, S and Balasundaraprabhu, R (2014) Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3 thin films. In: MATERIALS TECHNOLOGY, 29 (2). pp. 83-89.
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We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.
| Item Type: | Journal Article |
|---|---|
| Publication: | MATERIALS TECHNOLOGY |
| Publisher: | MANEY PUBLISHING |
| Additional Information: | Copyright for this article belongs to the MANEY PUBLISHING England |
| Keywords: | Al2O3 thin films; Reactive magnetron sputtering; Electrical properties |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
| Date Deposited: | 16 Jul 2014 09:14 |
| Last Modified: | 16 Jul 2014 09:14 |
| URI: | http://eprints.iisc.ac.in/id/eprint/49459 |
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