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Effect of Post-Deposition Annealing on the Al2O3/Si(100) Interface Properties

Prasanna, S and Kumar, Nanda AK and Rao, Mohan G and Jayakumar, S and Balasundaraprabhu, R (2014) Effect of Post-Deposition Annealing on the Al2O3/Si(100) Interface Properties. In: SCIENCE OF ADVANCED MATERIALS, 6 (5). pp. 1032-1036.

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Official URL: http://dx.doi.org/10.1166/sam.2014.1863


In the present investigation, Al2O3 thin films were deposited onto Si < 100 > substrates by DC reactive magnetron sputtering. The films were annealed in vacuum for one hour at 623, 823 and 1023 K. The composition of the films was quantitatively estimated using X-ray photoelectron spectroscopy (XPS) and the O/Al ratio was found be in the range 1.19 to 1.43. Grazing incidence X-ray diffraction (GIXRD) results revealed that the annealed films are amorphous in nature. Cross sectional transmission electron microscopy (X-TEM) analysis was carried out to study the microstructure and nature of the Al2O3-Si interface as a function of post-deposition annealing. TEM results revealed the presence of nanocrystalline gamma-Al2O3 in the annealed films and an amorphous interface layer was observed at the Al2O3 Si interface. The thickness of the amorphous interface layer was determined from the TEM analysis and the results are discussed.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
Keywords: Al2O3 Thin Films; Reactive Magnetron Sputtering; Cross Sectional TEM
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 17 Jul 2014 05:51
Last Modified: 17 Jul 2014 05:51
URI: http://eprints.iisc.ac.in/id/eprint/49447

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