ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Thakur, Bikash and Lee, Sungsik and Ahnood, Arman and Jeon, Sanghun and Sambandan, Sanjiv and Nathan, Arokia (2014) Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors. In: APPLIED PHYSICS LETTERS, 104 (20).

[img] PDF
app_phy_let_104-20_2014.pdf - Published Version
Restricted to Registered users only

Download (746kB) | Request a copy
Official URL: http://dx.doi.org/10.1063/1.4879554


Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of Delta E-t approximate to 0.3 eV and with a density of state distribution as D-t(Et-j) = D-t0 exp(-Delta E-t/kT) with D-t0 = 5.02 x 10(11) cm(-2) eV(-1). Such a model is useful for developing simulation tools for circuit design. (C) 2014 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 25 Jul 2014 10:22
Last Modified: 25 Jul 2014 10:22
URI: http://eprints.iisc.ac.in/id/eprint/49437

Actions (login required)

View Item View Item