Suppression of grain boundary relaxation in Zr-doped BiFeO3 thin films

Mukherjee, Somdutta and Srivastava, Amar and Gupta, Rajeev and Garg, Ashish (2014) Suppression of grain boundary relaxation in Zr-doped BiFeO3 thin films. In: JOURNAL OF APPLIED PHYSICS, 115 (20).

PDF jou_app_phy_115-20_2014.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

Here, we present the results of temperature dependent dielectric studies on chemical solution processed Zr-doped BiFeO3 (BFO) thin films deposited on Pt/Si substrates. We find that in contrast to the undoped BFO films, Zr doping at Fe-site suppresses the low frequency dielectric relaxation originating from the grain boundaries, attributed to the increased dipolar rigidity due to stronger Zr-O bonds. Temperature dependent dc conductivity obtained from impedance and modulus analyses shows two distinct conduction processes occurring inside the grains. At temperature below similar to 423K, conductivity is nearly temperature independent, while in the high temperature regime (above similar to 423K), conduction is governed by the long range movement of oxygen vacancies with an activation energy of similar to 1eV. (C) 2014 AIP Publishing LLC.

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright for this article belongs to the AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	14 Jul 2014 08:51
Last Modified:	14 Jul 2014 08:51
URI:	http://eprints.iisc.ac.in/id/eprint/49433

Actions (login required)

View Item