Continuity equation based nonquasi-static charge model for independent double gate MOSFET

Sharan, Neha and Mahapatra, Santanu (2014) Continuity equation based nonquasi-static charge model for independent double gate MOSFET. In: JOURNAL OF COMPUTATIONAL ELECTRONICS, 13 (2). pp. 353-359.

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Abstract

Using the numerical device simulation we show that the relationship between the surface potentials along the channel in any double gate (DG) MOSFET remains invariant in QS (quasistatic) and NQS (nonquasi-static) condition for the same terminal voltages. This concept along with the recently proposed `piecewise charge linearization' technique is then used to develop the intrinsic NQS charge model for a Independent DG (IDG) MOSFET by solving the governing continuity equation. It is also demonstrated that unlike the usual MOSFET transcapacitances, the inter-gate transcapacitance of a IDG-MOSFET initially increases with the frequency and then saturates, which might find novel analog circuit application. The proposed NQS model shows good agreement with numerical device simulations and appears to be useful for efficient circuit simulation.

Item Type:	Journal Article
Publication:	JOURNAL OF COMPUTATIONAL ELECTRONICS
Publisher:	SPRINGER
Additional Information:	Copy right for this article belongs to the SPRINGER, USA.
Keywords:	Compact modeling; Nonquasi static (NQS) effect; Double gate (DG) MOSFET
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	16 Jul 2014 09:00
Last Modified:	16 Jul 2014 09:00
URI:	http://eprints.iisc.ac.in/id/eprint/49427

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