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Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin films

Kumar, R T Ananth and Das, Chandasree and Asokan, S and Sanjeeviraja, C and Padiyan, D Pathinettam (2014) Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin films. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 115 (4). pp. 1151-1158.

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Official URL: http://dx.doi.org/10.1007/s00339-013-7976-9


This paper reports optical, photo-acoustic and electrical switching investigations of GeS2 amorphous thin films of different thicknesses, deposited on glass substrates in vacuum. The Tauc parameter (B (1/2)) and Urbach energy (E (U)) have been determined from the transmittance spectra, to understand the changes in structural disorder; it is found that B (1/2) increases whereas E (U) decreases as the thickness of the films increases. Based on the results, it is suggested that bond re-arrangement, i.e. transformation from homopolar bonds to heteropolar bonds, takes place with increase in thickness. The thermal diffusivity values of GeS2 thin films also show the presence of a chemically ordered network in the GeS2 thin films. Further, it is found that these films exhibit memory-type electrical switching. The observed variation in the switching voltages has been understood on the basis of increase in chemical order.

Item Type: Journal Article
Publisher: SPRINGER
Additional Information: Copyright for this article belongs to the SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 27 Jun 2014 05:24
Last Modified: 27 Jun 2014 05:24
URI: http://eprints.iisc.ac.in/id/eprint/49364

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