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Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target

Negi, DS and Roy, A and Loukya, B and Dileep, K and Shetty, S and Kumar, N and Kumar, Anil PS and Datta, R (2014) Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target. In: JOURNAL OF CRYSTAL GROWTH, 394 . pp. 112-115.

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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2014.02.033


We report here the growth of epitaxial Co metal thin film on c-plane sapphire by pulsed laser deposition (RD) using Co:ZnO target utilizing the composition inhomogeneity of the corresponding plasma. Two distinct plasma composition regions have been observed using heavily alloyed Co0.6Zn0.4O target. The central and intense region of the plasma grows Co:ZnO film; the extreme tail grows only Co metal with no trace of either ZnO or Co oxide In between the two extremes, mixed phases (Co +Co-oxides +Co:ZnO) were observed. The Co metal thin film grown in this way shows room temperature ferromagnetism with large in plane magnetization similar to 1288 emu cm(-3) and a coerciviLy of similar to 230 Oe with applied field parallel to the film-substrate interface. Carrier density of the film is similar to 10(22) cm(-3). The film is epiLaxial single phase Co metal which is confirmed by both X-ray diffraction and transmission electron microscopy characierizaLions. Planar Hall Effect (PHE) and Magneto Optic Kerr Effect (MOKE) measurements confirm that the film possesses similar attributes of Co metal. The result shows that the epiLaxial Co metal thin film can be grown from its oxides in the PLD. (C) 2014 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Keywords: Laser epitaxy; Metals; Oxides; Magnetic materials
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 16 Jun 2014 10:30
Last Modified: 16 Jun 2014 10:31
URI: http://eprints.iisc.ac.in/id/eprint/49249

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