Effect of Substrate Temperature on the Microstructure Variation in Sputter-deposited Hydrogenated Amorphous Silicon Thinfilms

Shaik, Habibuddin and Rao, Mohan G (2013) Effect of Substrate Temperature on the Microstructure Variation in Sputter-deposited Hydrogenated Amorphous Silicon Thinfilms. In: International Conference on Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), JUL 24-27, 2013, Chennai, INDIA, pp. 492-495.

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Abstract

Vacancy, void incorporation and Si-H-x configuration in hydrogenated amorphous silicon (a-Si:H) thin films was studied. Films were grown by Direct Current (DC), pulsed DC and Radio Frequency (RF) magnetron sputtering. Fourier Transform Infrared (FTIR) spectroscopic analysis has been carried out on the films and found that, the a-Si: H films grown by DC magnetron sputtering are of good quality compared to pulsed DC and RF deposited films. The effect of Substrate temperature (T-S) on the total hydrogen concentration (C-H), configuration of hydrogen bonding, density (decided by the vacancy and void incorporation) and the microstructure factor (R*) was studied. T-S is found to be an active parameter in affecting the above said properties of the films. The films contain both vacancies and voids. At low hydrogen dilutions the films are vacancy dominated and at high hydrogen dilutions they are void dominated. It is found that T-S favors monohydride (Si-H) bonding at the cost of dihydride (Si-H-2) bonding. This dividing line is at C-H=14 at.% H for DC sputter deposited films. The microstructure structure factor R* is found to be zero for as deposited DC films at T-S=773K. The threshold C-H for void dominated region is found to be C-H=23 at.% H for RF, C-H=18 at.% H for PDC and C-H similar to 14 at.%H for DC sputter deposited films.

Item Type:	Conference Proceedings
Publisher:	IEEE
Additional Information:	copyright for this article belongs to IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Keywords:	FTIR; a-Si:H; Substrate temperature; Microstructure factor; Sputtering
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	09 Jun 2014 09:29
Last Modified:	09 Jun 2014 09:29
URI:	http://eprints.iisc.ac.in/id/eprint/49206

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