Ghatak, Sukharrioy and Pal, AtiridraNath and Ghosh, Arindam (2013) Observation of localized states in atomically thin MoS2 field effect transistor. In: 31st International Conference on the Physics of Semiconductors (ICPS), JUL 29-AUG 03, 2012, Zurich, SWITZERLAND, pp. 405-406.
Full text not available from this repository. (Request a copy)Abstract
We present electrical transport arid low frequency (1/f) noise measurements on mechanically exfoliated single, In and triLayer MoS2-based FPI devices on Si/SiO2 substrate. We find that tie electronic states hi MoS2 are localized at low temperatures (T) and conduction happens through variable range hopping (VRH). A steep increase of 1/f noise with decreasing T, typical for localized regime was observed in all of our devices. From gate voltage dependence of noise, we find that the noise power is inversely proportional to square of the number density (proportional to 1/n(2)) for a wide range of T, indicating number density fluctuations to be the dominant source of 1/f noise in these MoS2 FETs.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | AIP Conference Proceedings |
| Publisher: | AMER INST PHYSICS |
| Additional Information: | Copyright for this article belongs to the AMER INST PHYSICS, USA |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 15 May 2014 05:57 |
| Last Modified: | 15 May 2014 05:59 |
| URI: | http://eprints.iisc.ac.in/id/eprint/48896 |
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