Growth of hafnium and zirconium suicides by reactive diffusion

Roy, Soumitra and Paul, Aloke (2014) Growth of hafnium and zirconium suicides by reactive diffusion. In: MATERIALS CHEMISTRY AND PHYSICS, 143 (3). pp. 1309-1314.

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Abstract

Diffusion controlled growth of the phases in Hf-Si and Zr-Si systems are studied by bulk diffusion couple technique. Only two phases grow in the interdiffusion zone, although several phases are present in both the systems. The location of the Kirkendall marker plane, detected based on the grain morphology, indicates that disilicides grow by the diffusion of Si. Diffusion of the metal species in these phases is negligible. This indicates that vacancies are present mainly on the Si sublattice. The activation energies for integrated diffusion coefficients in the HfSi2 and ZrSi2 are estimated as 394 +/- 37 and 346 +/- 34 kJ mol(-1), respectively. The same is calculated for the HfSi phase as 485 +/- 42 kJ mol(-1). The activation energies for Si tracer diffusion in the HfSi2 and ZrSi2 phases are estimated as 430 +/- 36 and 348 +/- 34 kJ mol(-1), respectively. (C) 2013 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	MATERIALS CHEMISTRY AND PHYSICS
Publisher:	ELSEVIER SCIENCE SA
Additional Information:	copyright for this article belongs to ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Keywords:	Diffusion; Intermetallic compounds; Defects; Microstructure
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	26 Mar 2014 07:59
Last Modified:	26 Mar 2014 07:59
URI:	http://eprints.iisc.ac.in/id/eprint/48729

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