Transfer free suspended graphene devices on silicon using electrodeposited copper

Bharadwaj, BKrishna and Pratap, Rudra and Raghavan, Srinivasan (2014) Transfer free suspended graphene devices on silicon using electrodeposited copper. In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32 (1).

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Abstract

Transfer free processes using Cu films greatly simplify the fabrication of reliable suspended graphene devices. In this paper, the authors report on the use of electrodeposited Cu films on Si for transfer free fabrication of suspended graphene devices. The quality of graphene layers on optimized electrodeposited Cu and Cu foil are found to be the same. By selectively etching the underlying Cu, the authors have realized by a transfer free process metal contacted, suspended graphene beams up to 50 mu m in length directly on Si. The suspended graphene beams do not show any increase in defect levels over the as grown state indicating the efficiency of the transfer free process. Measured room temperature electronic mobilities of up to 5200 cm(2)/V.s show that this simpler and CMOS compatible route has the potential to replace the foil based route for such suspended nano and micro electromechanical device arrays. (C) 2014 American Vacuum Society.

Item Type:	Journal Article
Publication:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Publisher:	A V S AMER INST PHYSICS
Additional Information:	copyright for this article belongs to A V S AMER INST PHYSICS,USA
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	19 Mar 2014 05:00
Last Modified:	19 Mar 2014 05:00
URI:	http://eprints.iisc.ac.in/id/eprint/48646

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