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Electrical switching behavior of amorphous Ge15Te85 Si--x(x) thin films with phase change memory applications

Das, Chandasree and Rao, Mohan G and Asokan, S (2014) Electrical switching behavior of amorphous Ge15Te85 Si--x(x) thin films with phase change memory applications. In: MATERIALS RESEARCH BULLETIN, 49 . pp. 388-392.

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Official URL: http://dx.doi.org/10.1016/j.materresbull.2013.09.0...


Amorphous Ge15Te85-xSix thin film switching devices (1 <= x <= 6) have been deposited in sandwich geometry, on glass substrates with aluminum electrodes, by flash evaporation technique. These devices exhibit memory type electrical switching, like bulk Ge15Te85-xSix glasses. However, unlike the bulk glasses, a-Ge15Te85-xSix films exhibit a smooth electrical switching behavior. The electrical switching fields of a-Ge15Te85-xSix thin film samples are also comparable with other chalcogenide samples used in memory applications. The switching fields of a-Ge15Te85-xSix films have been found to increase with increasing Si concentration. Also, the optical band gap of a-Ge15Te85-xSix films is found to increase with Si content. The observed results have been understood on the basis of increase in network connectivity and rigidity with Si addition. (C) 2013 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the PERGAMON-ELSEVIER SCIENCE LTD, ENGLAND
Keywords: Chalcogenides; Vapor deposition; Electrical properties; Optical properties
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 25 Feb 2014 10:14
Last Modified: 25 Feb 2014 10:14
URI: http://eprints.iisc.ac.in/id/eprint/48466

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