Thupakula, Umamahesh and Bal, Jayanta K. and Dalui, Amit and Debangshi, Anupam and Sarma, DD and Acharya, Somobrata (2014) Current rectification by a single ZnS nanorod probed using a scanning tunneling microscopic technique. In: JOURNAL OF MATERIALS CHEMISTRY C, 2 (6). pp. 1158-1164.
PDF
jou_mat_che_c_2-6_1158-1164_2014.pdf - Published Version Restricted to Registered users only Download (709kB) | Request a copy |
Abstract
We report on the rectification properties from a single ZnS nanorod measured using the UHV-SPM technique. The rectification behavior is evidenced from the current-voltage characteristics measured on a single ZnS nanorod. We propose a tunneling mechanism where the direct tunneling mechanism is dominant at lower applied bias voltages followed by resonant tunneling through discrete energy levels of the nanorod. A further increase in the bias voltage changes the tunneling mechanism to the Fowler-Nordheim tunneling regime enabling rectification behavior. Realizing rectification from a single ZnS nanorod may provide a means of realizing a single nanorod based miniaturized device.
Item Type: | Journal Article |
---|---|
Publication: | JOURNAL OF MATERIALS CHEMISTRY C |
Publisher: | ROYAL SOC CHEMISTRY |
Additional Information: | Copyright for this article belongs to the ROYAL SOC CHEMISTRY, ENGLAND |
Department/Centre: | Division of Chemical Sciences > Solid State & Structural Chemistry Unit |
Date Deposited: | 21 Feb 2014 08:48 |
Last Modified: | 21 Feb 2014 08:48 |
URI: | http://eprints.iisc.ac.in/id/eprint/48427 |
Actions (login required)
View Item |