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Organic device electrode fabricated by aluminum in nanopowder and bulk form and effect on device properties

Arul Varman, K and Mishra, Deepak K and Rajan, Kirtana M and Mallya, Ashwini N and Ramamurthy, Praveen C (2012) Organic device electrode fabricated by aluminum in nanopowder and bulk form and effect on device properties. In: 2012 International Conference on Emerging Electronics (ICEE), 15-17 Dec. 2012, Mumbai.

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Official URL: http://dx.doi.org/10.1109/ICEmElec.2012.6636270


Schottky barrier devices of metal/semiconductor/metal structure were fabricated using organic semiconductor polyaniline (PANI) and aluminium thin film cathode. Aluminium contacts were made by thermal evaporation technique using two different forms of metals (bulk and nanopowder). The structure and surface morphology of these films were investigated by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Grain size of the as-deposited films obtained by Scherrer's method, modified Williamson-Hall method, and SEM were found to be different. Current-voltage (I-V) characteristic of Schottky barrier device structure indicates that the calculated current density (J) for device fabricated from aluminium nanopowder is more than that from aluminium in bulk form.

Item Type: Conference Paper
Publisher: IEEE
Additional Information: Copyright of this article belongs to IEEE.
Keywords: Aluminium Metal Electrode; Organic Schottky Barrier Device; Metal Nanopowder; Electronic Properties
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 10 Feb 2014 10:23
Last Modified: 10 Feb 2014 10:23
URI: http://eprints.iisc.ac.in/id/eprint/48394

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