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Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique

Sunil, Anantha M and Deepa, KG and Nagaraju, J (2014) Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique. In: THIN SOLID FILMS, 550 . pp. 71-75.

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Official URL: http://dx.doi.org/10.1016/j.tsf.2013.10.053


Silver Indium Di-sulfide (AgInS2) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (T-s) on film growth is studied by varying the temperature from 250 to 400 degrees C. From the structural analysis, orthorhombic AgInS2 phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu-Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at T-s of 300 degrees C. Above 300 degrees C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS2 films varied from 1.55 to 1.89 eV and absorption coefficient is found to be >10(4) cm(-1). The films have sheet resistance in the range of 0.05 to 1300 Omega/square Both p and n type films are prepared through this technique without any external doping. (C) 2013 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: copyright for this article belongs to ELSEVIER SCIENCE SA,SWITZERLAND
Keywords: AgInS2; Chalcopyrite; Ultrasonic spray pyrolysis; Cu-Au structure; Carrier density
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 20 Jan 2014 08:26
Last Modified: 20 Jan 2014 08:27
URI: http://eprints.iisc.ac.in/id/eprint/48202

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