Pandey, Tribhuwan and Singh, David J and Parker, David and Singh, Abhishek K (2013) Thermoelectric properties of beta-FeSi2. In: JOURNAL OF APPLIED PHYSICS, 114 (15).
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Official URL: http://dx.doi.org/10.1063/1.4825217
Abstract
We investigate the thermoelectric properties of beta-FeSi2 using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both p- and n-type beta-FeSi2 over a wide range of carrier concentration and in addition find the performance for n-type to be higher than for the p-type. Our results indicate that, depending upon temperature, a doping level of 3 x 10(20) to 2 x 10(21) cm(-3) may optimize the thermoelectric performance. (C) 2013 AIP Publishing LLC.
Item Type: | Journal Article |
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Publication: | JOURNAL OF APPLIED PHYSICS |
Publisher: | AMER INST PHYSICS |
Additional Information: | Copyright for their article belongs to AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA |
Department/Centre: | Division of Physical & Mathematical Sciences > Mathematics |
Date Deposited: | 12 Dec 2013 11:53 |
Last Modified: | 12 Dec 2013 11:53 |
URI: | http://eprints.iisc.ac.in/id/eprint/47890 |
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