Chirakkara, Saraswathi and Krupanidhi, SB (2012) Tuning the photoluminescence of ZnO thin films by indium doping. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), DEC 19-22, 2011, Kanpur, INDIA.
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Zinc Oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown on p-type boron doped Si substrates by pulsed laser deposition (PLD). The effect of indium concentration on the structural, optical and electrical properties of the film was studied. XRD, XPS and Raman studies confirm the single phase formation and successful doping of In in to ZnO. We observed various photoluminescence emissions, ranging from UV to visible, with the incorporation of In into ZnO. Room temperature Current-Voltage (I-V) characteristics showed good p-n junction properties for n-type-undoped and In doped ZnO with p-type substrates. The turn on voltage was observed to be decreasing with increase in In composition.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | Proceedings of SPIE |
| Publisher: | SPIE-INT SOC OPTICAL ENGINEERING |
| Additional Information: | 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), Kanpur, INDIA, DEC 19-22, 2011 |
| Keywords: | ZnO; doping; Photoluminescence |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 07 Nov 2013 06:24 |
| Last Modified: | 07 Nov 2013 06:24 |
| URI: | http://eprints.iisc.ac.in/id/eprint/47700 |
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