Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor

Ghatak, Subhamoy and Ghosh, Arindam (2013) Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor. In: APPLIED PHYSICS LETTERS, 103 (12).

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Abstract

We present temperature dependent I-V measurements of short channel MoS2 field effect devices at high source-drain bias. We find that, although the I-V characteristics are ohmic at low bias, the conduction becomes space charge limited at high V-DS, and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage (V-c) was also determined. The density of trap states was quantitatively calculated from V-c. The possible origin of exponential trap distribution in these devices is also discussed. (C) 2013 AIP Publishing LLC.

Item Type:	Journal Article
Publication:	APPLIED PHYSICS LETTERS
Publisher:	AMER INST PHYSICS
Additional Information:	copyright for this article belongs to AIP
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	06 Nov 2013 06:08
Last Modified:	06 Nov 2013 06:08
URI:	http://eprints.iisc.ac.in/id/eprint/47685

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