Electrical switching in amorphous Si-Te-Ge thin films: Impact of input energy on crystallization process and switching parameters

Lakshmi, KP and Asokan, S (2013) Electrical switching in amorphous Si-Te-Ge thin films: Impact of input energy on crystallization process and switching parameters. In: JOURNAL OF NON-CRYSTALLINE SOLIDS, 377 (SI). pp. 175-178.

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Abstract

Electrical switching studies on amorphous Si15Te74Ge11 thin film devices show interesting changes in the switching behavior with changes in the input energy supplied; the input energy determines the extent of crystallization in the active volume, which is reflected in the value of SET resistances. This in turn, determines the trend exhibited by switching voltage (V-t) for different input conditions. The results obtained are analyzed on the basis of the amount of Joule heat generated, which determines the temperature of the active volume. Depending on the final temperature, devices are rendered either in the intermediate state with a resistance of 5*10(2) Omega or the ON state with a resistance of 5*10(1) Omega. (C) 2013 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	JOURNAL OF NON-CRYSTALLINE SOLIDS
Publisher:	ELSEVIER SCIENCE BV
Additional Information:	18th International Symposium on Non-Oxide and New Optical Glasses, Saint Malo, FRANCE, JUL 01-05, 2012
Keywords:	Phase change memories; Thin film conductivity; Electrical switching; Multi-stage crystallization
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	04 Nov 2013 06:32
Last Modified:	04 Nov 2013 06:32
URI:	http://eprints.iisc.ac.in/id/eprint/47678

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