Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET

Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 12 (5). pp. 665-667.

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Abstract

We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON NANOTECHNOLOGY
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copyright for this article belongs to IEEE Xplore
Keywords:	Band-to-band tunneling; complex band structure; graphene; tunnel field effect transistor (TFET)
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	25 Oct 2013 06:45
Last Modified:	25 Oct 2013 06:45
URI:	http://eprints.iisc.ac.in/id/eprint/47579

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