Ganapathi, Kolla Lakshmi and Bhat, Navakanta and Mohan, Sangeneni (2013) Optimization of HfO2 films for high transconductance back gated graphene transistors. In: Applied Physics Letters, 103 (7). 073105_1-073105_5.
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Abstract
Hafnium dioxide (HfO2) films, deposited using electron beam evaporation, are optimized for high performance back-gated graphene transistors. Bilayer graphene is identified on HfO2/Si substrate using optical microscope and subsequently confirmed with Raman spectroscopy. Back-gated graphene transistor, with 32 nm thick HfO2 gate dielectric, has been fabricated with very high transconductance value of 60 mu S. From the hysteresis of the current-voltage characteristics, we estimate the trap density in HfO2 to be in the mid 10(11)/cm(2) range, comparable to SiO2.
Item Type: | Journal Article |
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Publication: | Applied Physics Letters |
Publisher: | American Institute of Physics |
Additional Information: | Copyright of this article belongs to American Institute of Physics. |
Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
Date Deposited: | 04 Oct 2013 05:38 |
Last Modified: | 04 Oct 2013 05:38 |
URI: | http://eprints.iisc.ac.in/id/eprint/47491 |
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