Kumar, Rakesh R and Rao, Narasimha K and Rajanna, K and Phani, AR (2013) Novel co-evaporation approach for the growth of Sb doped SnO2 nanowires. In: Materials Letters, 106 . pp. 164-167.
PDF
Mate_Lett_106_164_2013.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy |
Abstract
Antimony doped tin oxide (Sb:SnO2) nanowires were grown by thermal and e-beam assisted co-evaporation of Sb and Sn in the presence of oxygen at a low substrate temperature of 450 degrees C. The field emission scanning electron microscopy study revealed that the nanowires had a length and diameter of 2-4 mu m and 20-60 nm respectively. Transmission electron microscopy study revealed the single crystalline nature of the nanowires; energy dispersive X-ray spectroscopy (EDS) and EDS mapping on the nanowires confirmed the presence of Sb doping in the nanowires. UV light detection study on the doped SnO2 nanowire films exhibited fast response and recovery time compared to undoped SnO2 nanowire films. This is an innovative and simple method to grow doped SnO2 nanowires.
Item Type: | Journal Article |
---|---|
Publication: | Materials Letters |
Publisher: | Elsevier Science |
Additional Information: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Physical Vapor Deposition; Thin Films; Nanocrystalline Materials; SnO2 Nanowires; Doping; Low Temperature Growth |
Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
Date Deposited: | 04 Oct 2013 05:37 |
Last Modified: | 04 Oct 2013 05:37 |
URI: | http://eprints.iisc.ac.in/id/eprint/47484 |
Actions (login required)
View Item |