ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

CMOS-Compatible and Scalable Deposition of Nanocrystalline Zinc Ferrite Thin Film to Improve Inductance Density of Integrated RF Inductor

Sai, Ranajit and Vinoy, KJ and Bhat, Navakanta and Shivashankar, SA (2013) CMOS-Compatible and Scalable Deposition of Nanocrystalline Zinc Ferrite Thin Film to Improve Inductance Density of Integrated RF Inductor. In: IEEE TRANSACTIONS ON MAGNETICS, 49 (7). pp. 4323-4326.

[img] PDF
ieee_tra_mag-49_7_4323-4326_2013.......pdf - Published Version
Restricted to Registered users only

Download (651kB) | Request a copy
Official URL: http://dx.doi.org/10.1109/TMAG.2013.2238514


Development towards the combination of miniaturization and improved functionality of RFIC has been stalled due to the lack of high-performance integrated inductors. To meet this challenge, integration of magnetic material with high permeability as well as low conductivity is a must. Ferrite films are excellent candidates for RF devices due to their low cost, high resistivity, and low eddy current losses. Unlike its bulk counterpart, nanocrystalline zinc ferrite, because of partial inversion in the spinel structure, exhibits novel magnetic properties suitable for RF applications. However, most scalable ferrite film deposition processes require either high temperature or expensive equipment or both. We report a novel low temperature (< 200 degrees C) solution-based deposition process for obtaining high quality, polycrystalline zinc ferrite thin films (ZFTF) on Si (100) and on CMOS-foundry-fabricated spiral inductor structures, rapidly, using safe solvents and precursors. An enhancement of up to 20% at 5 GHz in the inductance of a fabricated device was achieved due to the deposited ZFTF. Substantial inductance enhancement requires sufficiently thick films and our reported process is capable of depositing smooth, uniform films as thick as similar to 20 mu m just by altering the solution composition. The method is capable of depositing film conformally on a surface with complex geometry. As it requires neither a vacuum system nor any post-deposition processing, the method reported here has a low thermal budget, making it compatible with modern CMOS process flow.

Item Type: Journal Article
Additional Information: Copyright of this article is belongs to
Keywords: CMOS-compatible; deposition; film; RF inductor; zinc ferrite
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 02 Oct 2013 06:05
Last Modified: 02 Oct 2013 06:05
URI: http://eprints.iisc.ac.in/id/eprint/47363

Actions (login required)

View Item View Item