Investigating thermal stability of structural defects and its effect on d(0) ferromagnetism in undoped SnO2

Kamble, Vinayak B and Bhat, SV and Umarji, AM (2013) Investigating thermal stability of structural defects and its effect on d(0) ferromagnetism in undoped SnO2. In: JOURNAL OF APPLIED PHYSICS, 113 (24).

PDF jl_app_phy_113-24_2013.pdf - Published Version Restricted to Registered users only Download (2MB) | Request a copy

Abstract

The effect of annealing on structural defects and d(0) ferromagnetism in SnO2 nanoparticles prepared by solution combustion method is investigated. The as-synthesized SnO2 nanoparticles were annealed at 400-800 degrees C for 2 h, in ambient conditions. The crystallinity, size, and morphology of the samples were studied using x-ray diffraction and transmission electron microscopy studies. The annealing results in grain growth due to coarsening as well as reduction in oxygen vacancies as confirmed by Raman spectroscopy, photoluminescence spectroscopy, and x-ray photoelectron spectroscopy. All the as synthesized and annealed samples exhibit room temperature ferromagnetism (RTFM) with distinct hysteresis loops and the saturation magnetization as high as similar to 0.02 emu/g in as-synthesized samples. However, the saturation magnetization is drastically reduced with increasing annealing temperature. Further the presence of singly charged oxygen vacancies (V-o(-) signal at g-value 1.99) is confirmed by electron paramagnetic resonance studies, which also diminish with increasing annealing temperature. The observed diminishing RTFM and simultaneous evidences of diminishing O vacancies clearly indicate that RTFM is driven by defects in oxide lattice and confirms primary role of oxygen vacancies in inducing ferromagnetic ordering in metal oxide semiconductors. The study also provides improved fundamental understanding regarding the ambiguity in the origin of intrinsic RTFM in semiconducting metal oxides and projects their technological application in the field of spintronics. (C) 2013 AIP Publishing LLC.

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright for this article belongs to AMER INST PHYSICS, USA.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics
Date Deposited:	25 Sep 2013 11:49
Last Modified:	25 Sep 2013 11:49
URI:	http://eprints.iisc.ac.in/id/eprint/47314

Actions (login required)

View Item