Verma, Rekha and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet. In: IEEE Transactions on Electron Devices, 60 (8). pp. 2695-2698.
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Abstract
In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (mu) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered to estimate mu over a wide range of temperature. We also demonstrate the variation of mu with carrier concentration as well as the longitudinal electric field. We find that at high electric field (>10(6) Vm(-1)), the mobility falls sharply, exhibiting the scattering between the electrons and flexural phonons. We also note here that under quasi-ballistic transport, the mobility tends to a constant value at low temperature, rather than in between T-2 and T-1 in strongly diffusive regime. Our analytical results agree well with the available experimental data, while the methodologies are put forward to estimate the other carrier-transmission-dependent transport properties.
Item Type: | Journal Article |
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Publication: | IEEE Transactions on Electron Devices |
Publisher: | IEEE-Inst Electrical Electronics Engineers Inc |
Additional Information: | Copyright of this article belongs to IEEE-Inst Electrical Electronics Engineers Inc. |
Keywords: | Flexural Phonons; Graphene; Mobility |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 21 Sep 2013 13:02 |
Last Modified: | 21 Sep 2013 13:02 |
URI: | http://eprints.iisc.ac.in/id/eprint/47250 |
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