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Indium Assisted Growth of Silicon Nanowires by Electron beam evaporation

Kumar, Rakesh R and Rao, Narasimha K and Rajanna, K (2013) Indium Assisted Growth of Silicon Nanowires by Electron beam evaporation. In: International Conference on Recent Trends in Applied Physics and Material Science (RAM), FEB 01-02, 2013, Govt Coll Engn & Technol Bikaner, Bikaner, Rajasthan, INDIA, pp. 105-106.

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Silicon nanowires were grown on Si substrates by electron beam evaporation (EBE) was demonstrated using Indium as an alternate catalyst to gold. We have studied the effect of substrate (growth) temperature, deposition time on the growth of nanowires. It was observed that a narrow temperature window from 300 degrees C to 400 degrees C for the nanowires growth. At growth temperature >= 400 degrees C suppression of nanowires growth was observed due to evaporation of catalyst particle. It is also observed that higher deposition times also leading to the absence of nanowire growth as well as uncatalyzed deposition on the nanowires side walls due to limited surface diffusion of ad atoms and catalyst evaporation.

Item Type: Conference Proceedings
Series.: AIP Conference Proceedings
Additional Information: Copyright for this article belongs to the AIP
Keywords: Silicon Nanowires; Electron beam evaporation; VLS mechanism; Substrate temperature
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 10 Sep 2013 06:00
Last Modified: 10 Sep 2013 06:00
URI: http://eprints.iisc.ac.in/id/eprint/47094

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