Micro-Raman and photoluminescence studies of self-assembled quantum well microtubes on GaAs substrate

Silambarasan, M and Saravanan, S and Nayak, Deepak R (2013) Micro-Raman and photoluminescence studies of self-assembled quantum well microtubes on GaAs substrate. In: MATERIALS LETTERS, 105 . pp. 148-150.

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Abstract

The Semiconductor Quantum Well (QW) microtubes have been fabricated by strain-induced self assembling technique. Three types of multilayer structures have consisted of GaAs/InxGa1-xAs strained layers containing with various thickness of Monolayers of (GaAs/AlGaAs) QW were grown by Varian Gen II Molecular Beam Epitaxy (MBE) on the GaAs (100) substrate. The shape of the rolled up microtubes provide a clear idea about the formation of three dimensional micro- and nanostructures. Micro-Raman and photoluminescence (PL) studies were performed to the QW microtubes and as compared with their grown area on the GaAs substrate. The results of Raman spectra show the frequency shift of phonon modes measured in tube and compared with the grown area due to residual strain. The PL peaks of the microtube were red-shifted due to the strain effect and transition of bandgap from Type-II to Type-I. (C) 2013 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	MATERIALS LETTERS
Publisher:	ELSEVIER SCIENCE BV
Additional Information:	Copyright of this article is belongs to ELSEVIER
Keywords:	Semiconductors; Epitaxial growth; Microtube; Raman; PL; Quantum well
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	20 Aug 2013 11:24
Last Modified:	20 Aug 2013 11:33
URI:	http://eprints.iisc.ac.in/id/eprint/47027

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