Murali, Banavoth and Krupanidhi, SB (2013) Tailoring the band gap and transport properties of Cu3BiS3 nanopowders for photodetector applications. In: Journal of Nanoscience and Nanotechnology, 13 (6). pp. 3901-3909.
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We report a facile route to synthesize high quality earth abundant absorber Cu3BiS3, tailoring the band gap with the morphology manipulation and thereby analyzed the secondary phases and their role in the transport property. The sample at 48 hours reaction profile showed good semiconducting behavior, whereas other samples showed mostly a metallic behavior. Band gap was varied from 1.86 eV to 1.42 eV upon controling the reaction profile from 8 hours to 48 hours. The activation energy was calculated to be 0.102 eV. The temperature coefficient of resistance (TCR) was found to be 0.03432 K-1 at 185 K. The IR photodectection properties in terms of photoresponse have been demonstrated. The high internal gain (G = 3.7 x 10(4)), responsivity (R = 3.2 x 10(4) A W-1) for 50 mW cm(-2) at 5 V make Cu3BiS3, an alternative potential absorber in meliorating the technological applications as near IR photodetectors.
| Item Type: | Journal Article |
|---|---|
| Publication: | Journal of Nanoscience and Nanotechnology |
| Publisher: | American Scientific Publishers |
| Additional Information: | Copyright of this article belongs to American Scientific Publishers. |
| Keywords: | Cu3BiS3; Band Gap Tailoring; Solvothermal; IR Photo Detection |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 30 Jul 2013 12:05 |
| Last Modified: | 30 Jul 2013 12:05 |
| URI: | http://eprints.iisc.ac.in/id/eprint/46911 |
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