Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

Reddy, Koteeswara N and Devika, M and Prashantha, M and Rames, K and Ivanova, ZG and Zavadil, J (2013) Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films. In: Journal of Optoelectronics and Advanced Materials, 15 (3-4). pp. 182-186.

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Abstract

This study deals with the influence of Er-doping level and thermal annealing on the optical properties of amorphous Ge-Ga-S thin films. Nominal compositions of (GeS2)(75)(Ga2S3)(25) doped with high concentrations of 2.1 and 2.4 mol% Er2S3 (corresponding to 1.2 and 1.4 at% Er, respectively) have been chosen for this work. The results have been related to those obtained for the un-doped samples. The values of the refractive index, the absorption coefficient and optical band gap have been determined from the transmittance data. It has been found that the optical band gap of un-doped and 2.1 mol% Er2S3-doped films slightly increases with annealing temperature, whereas at 2.4 mol% Er2S3-doping level it is decreased. The dependences of the optical parameters on the erbium concentration and effect of annealing in the temperature range of 100-200 degrees C have been evaluated and discussed in relation to possible structural changes.

Item Type:	Journal Article
Publication:	Journal of Optoelectronics and Advanced Materials
Publisher:	National Institute of Research & Development for Optoelectronics, Romania
Additional Information:	Copyright of this article belongs to National Institute of Research & Development for Optoelectronics, Romania.
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Physics
Date Deposited:	16 Jul 2013 08:33
Last Modified:	16 Jul 2013 08:33
URI:	http://eprints.iisc.ac.in/id/eprint/46877

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