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Excitation- and power-dependent photoluminescence from oxidized Ge

Shinde, Satish Laxman and Nanda, Karuna Kar (2013) Excitation- and power-dependent photoluminescence from oxidized Ge. In: Materials Letters, 101 . pp. 5-8.

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Official URL: http://dx.doi.org/10.1016/j.matlet.2013.03.054


Wafer/microcrystallites of oxidized Ge with holes/nanoholes synthesized by thermal oxidation strategy from Ge wafer/microcrystallites can convert one wavelength to another. Both oxidized Ge wafer and microcrystallites shows excitation- and power-dependent luminescence. Red-shift is observed as the excitation wavelength is increased, while blue-shift is observed as power density is increased. Over all, blue-green-yellow-orange luminescence is observed depending on the excitation wavelength and the morphology of oxidized Ge. The various defects level associated with germanium-oxygen vacancies in GeO2 and Ge/GeO2 interface are responsible for the excitation-dependent luminescence. Being a light-conversion material, oxidized Ge is expected to find potential applications in solid-state lighting, photovoltaic devices and photocatalysis.

Item Type: Journal Article
Publication: Materials Letters
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 19 Jul 2013 07:16
Last Modified: 19 Jul 2013 07:16
URI: http://eprints.iisc.ac.in/id/eprint/46850

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