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Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Prasanna, S and Krishnendu, G and Shalini, S and Biji, P and Rao, Mohan G and Jayakumar, S and Balasundaraprabhu, R (2013) Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films. In: Materials Science in Semiconductor Processing, 16 (3). pp. 705-711.

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Official URL: http://dx.doi.org/10.1016/j.mssp.2012.12.012


Thin films of alumina (Al2O3) were deposited over Si < 1 0 0 > substrates at room temperature at an oxygen gas pressure of 0.03 Pa and sputtering power of 60 W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750 degrees C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53 nm to 0.7 nm was observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on p-type Si < 1 0 0 > substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.

Item Type: Journal Article
Publication: Materials Science in Semiconductor Processing
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Thin Films; Reactive Magnetron Sputtering; Electrical Properties
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 11 Jul 2013 06:19
Last Modified: 11 Jul 2013 06:19
URI: http://eprints.iisc.ac.in/id/eprint/46813

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