Kumar, Rakesh R and Rao, Narasimha K and Phani, AR (2013) Growth of Germanium Nanowires by electron beam evaporation. In: Proceedings of the 57th DAE Solid State Physics Symposium 2012, 3–7 December 2012, Indian Institute of Technology, Bombay, Mumbai, India, pp. 266-267.
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Growth of high density germanium nanowires on Si substrates by electron beam evaporation (EBE) has been demonstrated using gold as catalyst. The germanium atoms are provided by evaporating germanium by electron beam evaporation (EBE) technique. Effect of substrate (growth) temperature and deposition time on the growth of nanowires has studied. The morphology of the nanowires was investigated by field emission scanning electron microscope (FESEM). It has been observed that a narrow temperature window from 380 degrees C to 480 degrees C is good for the nanowires growth as well as restriction on the maximum length of nanowires. It is also observed that high substrate temperature leading to the completely absence of nanowire growth.
| Item Type: | Conference Paper |
|---|---|
| Series.: | AIP Conference Proceedings |
| Publisher: | American Institute of Physics |
| Additional Information: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Germanium Nanowires; Electron Beam Evaporation; VLS Mechanism; Substrate Temperature |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
| Date Deposited: | 23 Jun 2013 09:37 |
| Last Modified: | 23 Jun 2013 09:37 |
| URI: | http://eprints.iisc.ac.in/id/eprint/46768 |
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