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Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection

Kumar, Rakesh R and Rao, Narasimha K and Rajanna, K and Phani, AR (2013) Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection. In: Materials Research Bulletin, 48 (4). pp. 1545-1552.

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Official URL: http://dx.doi.org/10.1016/j.materresbull.2012.12.0...


For the first time, high quality tin oxide (SnO2) nanowires have been synthesized at a low substrate temperature of 450 degrees C via vapor-liquid-solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2-4 mu m and diameter of 20-60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO2 nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO2 nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 x 10(-4) mbar suggested that a temperature equal to or greater than 450 degrees C was the best condition for phase pure SnO2 nanowires growth. The SnO2 nanowires grown on a SiO2 substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO2 NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 mu W/cm(2) UV lamp (330 nm) intensity on the photo detector.

Item Type: Journal Article
Publication: Materials Research Bulletin
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Nanostructures; Vapor Deposition; Electron Microscopy; Microstructure; Surface Properties
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 28 May 2013 06:54
Last Modified: 28 May 2013 06:54
URI: http://eprints.iisc.ac.in/id/eprint/46580

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