Bipolar Poisson Solution for Independent Double-Gate MOSFET

Abraham, Aby and Thakur, Pankaj Kumar and Mahapatra, Santanu (2013) Bipolar Poisson Solution for Independent Double-Gate MOSFET. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (1). pp. 498-501.

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Abstract

We propose a new set of input voltage equations (IVEs) for independent double-gate MOSFET by solving the governing bipolar Poisson equation (PE) rigorously. The proposed IVEs, which involve the Legendre's incomplete elliptic integral of the first kind and Jacobian elliptic functions and are valid from accumulation to inversion regimes, are shown to have good agreement with the numerical solution of the same PE for all bias conditions.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copyright for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, USA.
Keywords:	Compact modeling; independent double-gate (IDG) MOSFET; Poisson solution
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	09 May 2013 11:18
Last Modified:	09 May 2013 11:18
URI:	http://eprints.iisc.ac.in/id/eprint/46503

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