Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions

Ghosh, Ram Krishna and Mahapatra, Santanu (2013) Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (1). pp. 274-279.

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Abstract

We investigate the direct band-to-band tunneling (BTBT) in a reverse biased molybdenum disulfide (MoS2) nanoribbon p-n junction by analyzing the complex band structure obtained from semiempirical extended Huckel method under relaxed and strained conditions. It is demonstrated that the direct BTBT is improbable in relaxed monolayer nanoribbon; however, with the application of certain uniaxial tensile strain, the material becomes favorable for it. On the other hand, the relaxed bilayer nanoribbon is suitable for direct BTBT but becomes unfavorable when the applied uniaxial tensile or compressive strain goes beyond a certain limit. Considering the Wentzel-Kramers-Brillouin approximation, we evaluate the tunneling probability to estimate the tunneling current for a small applied reverse bias. Reasonably high tunneling current in the MoS2 nanoribbons shows that it can take advantage over graphene nanoribbon in future tunnel field-effect transistor applications.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copyright for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, USA.
Keywords:	Bandgap; band-to-band tunneling (BTBT); complex band structure; nanoribbon; strain
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	09 May 2013 11:17
Last Modified:	09 May 2013 11:17
URI:	http://eprints.iisc.ac.in/id/eprint/46502

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