Kashyap, S and Chattopadhyay, K (2013) Synthesis and phase evolution in Nb/Si multilayers obtained by sequential laser ablation. In: THIN SOLID FILMS, 531 . pp. 312-319.
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Abstract
The paper reports the synthesis of Nb/Si multilayers (48/27 nm) deposited on Si single crystal substrate by sequential laser ablation of elemental Nb and Si. Significant amount of Nb is found in the amorphous Si layer (similar to 25-35 at.% Nb). The Nb layer is found to be polycrystalline. The phase evolution of the multilayer has been studied by annealing at 600 degrees C for various times and carrying out cross sectional electron microscopic studies. We report the formation of amorphous silicide layer at the Nb/Si interface followed by the formation of the NbSi2 phase in the Si layer. Further annealing leads to the nucleation of hexagonal Nb5Si3 grains in amorphous silicide layers at Nb/NbSi2 interfaces. These results are different from those reported for sputter deposited multilayer. (C) 2013 Elsevier B. V. All rights reserved.
Item Type: | Journal Article |
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Publication: | THIN SOLID FILMS |
Publisher: | ELSEVIER SCIENCE SA |
Additional Information: | Copyright for this article belongs to the ELSEVIER SCIENCE SA, SWITZERLAND. |
Keywords: | Intermetallics; Phase transformation; Microscopy; Laser ablation; Multilayer thin film |
Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
Date Deposited: | 30 Apr 2013 11:29 |
Last Modified: | 30 Apr 2013 11:29 |
URI: | http://eprints.iisc.ac.in/id/eprint/46462 |
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