k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire

Ghosh, Ram Krishna and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire. In: SOLID-STATE ELECTRONICS, 80 . pp. 124-134.

PDF spl_sta_ele_80_124_2013.pdf - Published Version Restricted to Registered users only Download (802kB) | Request a copy

Abstract

In this paper, we address a physics based closed form model for the energy band gap (E-g) and the transport electron effective mass in relaxed and strained 100] and 110] oriented rectangular Silicon Nanowire (SiNW). Our proposed analytical model along 100] and 110] directions are based on the k.p formalism of the conduction band energy dispersion relation through an appropriate rotation of the Hamiltonian of the electrons in the bulk crystal along 001] direction followed by the inclusion of a 4 x 4 Luttinger Hamiltonian for the description of the valance band structure. Using this, we demonstrate the variation in Eg and the transport electron effective mass as function of the cross-sectional dimensions in a relaxed 100] and 110] oriented SiNW. The behaviour of these two parameters in 100] oriented SiNW has further been studied with the inclusion of a uniaxial strain along the transport direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] with the former one. In addition, the energy band gap and the effective mass of a strained 110] oriented SiNW has also been formulated. Using this, we compare our analytical model with that of the extracted data using the nearest neighbour empirical tight binding sp(3)d(5)s* method based simulations and has been found to agree well over a wide range of device dimensions and applied strain. (C) 2012 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	SOLID-STATE ELECTRONICS
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
Additional Information:	Copyright for this article belongs to the PERGAMON-ELSEVIER SCIENCE LTD, ENGLAND.
Keywords:	Silicon nanowire; Size quantization; Band gap; Effective mass; Strain
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	15 Apr 2013 11:56
Last Modified:	15 Apr 2013 11:56
URI:	http://eprints.iisc.ac.in/id/eprint/46404

Actions (login required)

View Item