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Electrical switching studies on amorphous Ge‐Te‐Sn thin films

Das, Chandasree and Mahesha, MG and Mohan Rao, G and Asokan, S (2011) Electrical switching studies on amorphous Ge‐Te‐Sn thin films. In: Solid State Physics, Proceedings of the 55th DAE Solid State Physics Symposium 2010, 26–30 December 2010, Manipal, (India).

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Official URL: http://dx.doi.org/10.1063/1.3606017


Electrical switching studies on amorphous Ge17Te83−xSnx thin films (1 ≤ x ≤ 4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge17Te83−xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83−xSnx samples, make them suitable candidates for phase change memory applications.

Item Type: Conference Proceedings
Series.: AIP Conference Proceedings
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Keywords: Switching; Quenching (Optical); Voltage Measurement; Thin Films
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 02 May 2013 06:18
Last Modified: 02 May 2013 06:18
URI: http://eprints.iisc.ac.in/id/eprint/46279

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