Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO2 thin films

Vishwas, M and Rao, Narasimha K and Chakradhar, RPS (2012) Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO2 thin films. In: SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 99 . pp. 33-36.

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Abstract

Titanium dioxide (TiO2) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO2 films were investigated. The refractive index of TiO2 films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO2 film is of anatase phase after annealing at 300 degrees C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. (C) 2012 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
Additional Information:	Copyright for this article belongs to PERGAMON-ELSEVIER SCIENCE LTD, ENGLAND
Keywords:	TiO2;Anatase;Raman spectra;Photoluminescence;Optical properties
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	28 Jan 2013 11:40
Last Modified:	28 Jan 2013 11:40
URI:	http://eprints.iisc.ac.in/id/eprint/45665

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