Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface

Sugavaneshwar, Ramu Pasupathi and Nagao, Tadaaki and Nanda, Karuna Kar (2012) Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface. In: MATERIALS EXPRESS, 2 (3). pp. 245-250.

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Abstract

We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in gallium by local droplet etching. Nanometer-sized gallium droplets yield nanoholes when annealed in ultra-high vacuum at moderate temperatures (similar to 500 degrees C) without affecting the other regions. High vacuum and moderate annealing temperatures are key parameters to obtain well-defined nanoholes with diameter comparable to that of Ga droplets. Self-assembly of Ga droplet leads to a nanohole density of 4-8 x 10(10)/cm(2).

Item Type:	Journal Article
Publication:	MATERIALS EXPRESS
Publisher:	AMER SCIENTIFIC PUBLISHERS
Additional Information:	Copyright for this article belongs to AMER SCIENTIFIC PUBLISHERS,USA
Keywords:	Nanohole Fabrication;Self-Assembly of Ga Droplets;Si Etching
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	31 Dec 2012 07:20
Last Modified:	31 Dec 2012 07:20
URI:	http://eprints.iisc.ac.in/id/eprint/45602

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