Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

Narayanachari, KVLV and Raghavan, Srinivasan (2012) Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates. In: JOURNAL OF APPLIED PHYSICS, 112 (7).

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Abstract

Understanding and controlling growth stress is a requisite for integrating oxides with Si. Yttria stabilized zirconia (YSZ) is both an important functional oxide and a buffer layer material needed for integrating other functional oxides. Stress evolution during the growth of (100) and (111) oriented YSZ on Si (100) by radio frequency and reactive direct current sputtering has been investigated with an in-situ monitor and correlated with texture evolution. Films nucleated at rates <5 nm/min are found to be (111) oriented and grow predominantly under a compressive steady state stress. Films nucleated at rates >20 nm/min are found to be (100) oriented and grow under tension. A change in growth rate following the nucleation stage does not change the orientation. The value of the final steady state stress varies from -4.7 GPa to 0.3 GPa. The in-situ studies show that the steady state stress generation is a dynamic phenomenon occurring at the growth surface and not decided at film nucleation. The combination of stress evolution and texture evolution data shows that the adatom injection into the grain boundaries is the predominant source of compressive stress and grain boundary formation at the growth surface is the source of tensile stress. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4757924]

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright for this article belongs to AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, MELVILLE, USA
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	02 Jan 2013 08:44
Last Modified:	02 Jan 2013 08:44
URI:	http://eprints.iisc.ac.in/id/eprint/45596

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