Ravi, Raju and Paul, Aloke (2012) Diffusion and growth mechanism of phases in the Pd-Sn system. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 23 (12). pp. 2306-2310.
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Abstract
Growth mechanism of phases and atomic mechanism of diffusion are discussed in the Pd-Sn system. The Kirkendall marker plane location indicates that the PdSn4 phase grows because of diffusion of Sn. Atomic arrangement in the crystal indicates that Sn can diffuse through its own sublattice but Pd cannot diffuse unless antisites are present. The negligible diffusion of Pd indicates the absence of Pd antisites. The activation energy value indicates that the contribution from grain boundary diffusion cannot be neglected although experiments were conducted in the homologous temperature range of 0.7-0.79.
Item Type: | Journal Article |
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Publication: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS |
Publisher: | SPRINGER |
Additional Information: | Copyright for this article belongs to Springer |
Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
Date Deposited: | 21 Dec 2012 04:04 |
Last Modified: | 21 Dec 2012 04:05 |
URI: | http://eprints.iisc.ac.in/id/eprint/45537 |
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