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Direct ultrafast laser written C-band waveguide amplifier in Er-doped chalcogenide glass

Sabapathy, Tamilarasan and Ayiriveetil, Arunbabu and Kar, Ajoy K and Asokan, Sundarrajan and Beecher, Stephen J (2012) Direct ultrafast laser written C-band waveguide amplifier in Er-doped chalcogenide glass. In: OPTICAL MATERIALS EXPRESS, 2 (11). pp. 1556-1561.

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This paper reports the fabrication and characterization of an ultrafast laser written Er-doped chalcogenide glass buried waveguide amplifier; Er-doped GeGaS glass has been synthesized by the vacuum sealed melt quenching technique. Waveguides have been fabricated inside the 4 mm long sample by direct ultrafast laser writing. The total passive fiber-to-fiber insertion loss is 2.58 +/- 0.02 dB at 1600 nm, including a propagation loss of 1.6 +/- 0.3 dB. Active characterization shows a relative gain of 2.524 +/- 0.002 dB/cm and 1.359 +/- 0.005 dB/cm at 1541 nm and 1550 nm respectively, for a pump power of 500 mW at a wavelength of 980 nm. (C) 2012 Optical Society of America

Item Type: Journal Article
Additional Information: Copyright for this article belongs to OPTICAL SOC AMER, WASHINGTON
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 31 Dec 2012 05:44
Last Modified: 31 Dec 2012 05:44
URI: http://eprints.iisc.ac.in/id/eprint/45476

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