Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 152 (18). pp. 1771-1775.

PDF Sol_sta_com_152-18_2012.pdf - Published Version Restricted to Registered users only Download (726kB) | Request a copy

Abstract

We present the study involving the dependence of carrier concentration of InN films, grown on GaN templates using the plasma assisted molecular beam epitaxy system, on growth temperature. The influence of InN carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is also discussed. The optical absorption edge of InN film was found to be strongly dependent on carrier concentration, and was described by Kane's k.p model, with non-parabolic dispersion relation for carrier in the conduction band. The position of the Fermi-level in InN films was modulated by the carrier concentration in the InN films. The barrier height of the heterojunctions as estimated from I-V characteristic was also found to be dependent on the carrier concentration of InN. (C) 2012 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier Science
Additional Information:	Copyright for this article is belongs to Elsevier Science.
Keywords:	Heterostructures;Schottky junctions;Thermionic field emission
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	07 Dec 2012 09:32
Last Modified:	07 Dec 2012 09:32
URI:	http://eprints.iisc.ac.in/id/eprint/45203

Actions (login required)

View Item